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Journal of Luminescence

Volumn 93, Issue 4, 2001, Pages 321-326

The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD

(8) Li, Shuti a Mo, Chunlan a Wang, Li a Xiong, Chuanbing a Peng, Xuexin a Jiang, Fengyi a Deng, Zhenbo b Gong, Dawei b

a NANCHANG UNIVERSITY (China)

b FUDAN UNIVERSITY (China)

Author keywords

GaN; Hall mobility; MOCVD; Photoluminescence; Si doping; X ray diffraction; Yellow luminescence

Indexed keywords

ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; CARRIER MOBILITY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; X RAY DIFFRACTION;

HALL MOBILITY; YELLOW LUMINESCENCE;

LUMINESCENCE OF SOLIDS;

EID: 0035426993 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(01)00206-X Document Type: Article

Times cited : (26)

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