Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending

Applied Physics Letters

Volumn 93, Issue 25, 2008, Pages

  Chin, Shu Cheng ^a   Chang, Yuan Chih ^a   Chang, Chia Seng ^a   Woon, Wei Yen ^b,c   Lin, Li Te ^b   Tao, Hun Jan ^b  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); CARBON NANOTUBES; ELECTROSTATIC DEVICES; ELECTROSTATIC FORCE; ELECTROSTATICS;

AMPLITUDE MEASUREMENTS; DOPED SEMICONDUCTORS; DOPING DENSITIES; DOPING FLUCTUATIONS; EFFECTIVE CHANNEL LENGTHS; ELECTROSTATIC FORCE MICROSCOPIES; NANOSCALE; SOURCE/DRAIN REGIONS; SURFACE BAND BENDING;

DOPING (ADDITIVES);

EID: 58149173810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050521     Document Type: Article

References (16)

1. S. Xiong and J. Bokor, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.821563 51, 228 (2004).
2. K. Kimura, K. Kobayashi, H. Yamada, K. Matsushige, and K. Usuda, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2198859 24, 1371 (2006).
3. C. Y. Nakakura, P. Tangyunyong, D. L. Hetherington, and M. R. Shaneyfelt, Rev. Sci. Instrum. 0034-6748 10.1063/1.1527722 74, 127 (2003).
4. L. Zhang, K. Ohuchi, K. Adachi, K. Ishimaru, M. Takayanagi, and A. Nishiyama, Appl. Phys. Lett. 0003-6951 10.1063/1.2736206 90, 192103 (2007).
5. P. Eyben, D. Alvarez, M. Jurczak, R. Rooyackers, A. De Keersgieter, E. Augendre, and W. Vandervorst, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1638772 22, 364 (2004).
6. H. Fukutome, Y. Momiyama, T. Kubo, Y. Tagawa, T. Aoyama, and H. Arimoto, IEEE Trans. Electron Devices 53, 2755 (2006). 0018-9383
7. S. D. Tzeng, C. L. Wu, Y. C. You, T. T. Chen, S. Gwo, and H. Tokumoto, Appl. Phys. Lett. 0003-6951 10.1063/1.1530377 81, 5042 (2002).
8. S. B. Arnason, A. G. Rinzler, Q. Hudspeth, and A. F. Hebard, Appl. Phys. Lett. 0003-6951 10.1063/1.125168 75, 2842 (1999).
9. N. R. Wilson and J. V. Macpherson, J. Appl. Phys. 0021-8979 10.1063/1.1781759 96, 3565 (2004).
10. S. C. Chin, Y. C. Chang, C. C. Hsu, W. H. Lin, C. I Wu, C. S. Chang, T. T. Tsong, W. Y. Woon, L. T. Lin, and H. J. Tao, Nanotechnology 19, 325703 (2008). 0957-4484
11. M. W. Nelson, P. G. Schroeder, R. Schlaf, and B. A. Parkinson, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.590760 17, 1354 (1999).
12. C. H. Lei, A. Das, M. Elliott, and J. E. Macdonald, Nanotechnology 0957-4484 10.1088/0957-4484/15/5/038 15, 627 (2004).
13. J. P. Cleveland, B. Anczykowski, A. E. Schmid, and V. B. Elings, Appl. Phys. Lett. 0003-6951 10.1063/1.121434 72, 2613 (1998).
14. E. Strassburg, A. Boag, and Y. Rosenwaks, Rev. Sci. Instrum. 0034-6748 10.1063/1.1988089 76, 083705 (2005).
15. J. Colchero, A. Gil, and A. M. Baró, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.245403 64, 245403 (2001).
16. J. Y. Park, G. M. Sacha, M. Enachescu, D. F. Ogletree, R. A. Ribeiro, P. C. Canfield, C. J. Jenks, P. A. Thiel, J. J. Sáenz, and M. Salmeron, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.95.136802 95, 136802 (2005).