Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Applied Physics Letters

Volumn 82, Issue 9, 2003, Pages 1425-1427

  Irisawa, T ^a   Myronov, M ^b   Mironov, O A ^b,c   Parker, E H C ^b   Nakagawa, K ^d   Murata, M ^a   Koh, S ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c INTERNATIONAL LABORATORY OF HIGH MAGNETIC FIELDS AND LOW TEMPERATURES   (Poland)

^d Ctr for Crystal Sci and Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; OSCILLATIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SUBSTRATES;

HOLE DENSITY DEPENDENCE;

HETEROJUNCTIONS;

EID: 0037416565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558895     Document Type: Article

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