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Volumn 552, Issue 1-2, 2005, Pages 43-48
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Proton irradiation results of p+/n-/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion
a
CERN
(Switzerland)
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Author keywords
Material engineering; Radiation hardness; Si particle detectors
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Indexed keywords
DOPING (ADDITIVES);
ELECTRIC POTENTIAL;
IRRADIATION;
PROTONS;
THERMAL EFFECTS;
MATERIAL ENGINEERING;
RADIATION HARNESS;
SI PARTICLE DETECTORS;
THERMAL PROCESSES;
RADIATION DETECTORS;
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EID: 26444461456
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2005.06.004 Document Type: Conference Paper |
Times cited : (27)
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References (23)
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