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Volumn 552, Issue 1-2, 2005, Pages 43-48

Proton irradiation results of p+/n-/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion

Author keywords

Material engineering; Radiation hardness; Si particle detectors

Indexed keywords

DOPING (ADDITIVES); ELECTRIC POTENTIAL; IRRADIATION; PROTONS; THERMAL EFFECTS;

EID: 26444461456     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.004     Document Type: Conference Paper
Times cited : (27)

References (23)
  • 1
    • 26444501874 scopus 로고    scopus 로고
    • F. Gianotti, et al., hep-ph/0204087: April 2002
    • F. Gianotti, et al., hep-ph/0204087: April 2002.
  • 8
    • 26444524201 scopus 로고    scopus 로고
    • CERN-LHCC-2003-058
    • RD50 Status Report 2002/2003 CERN-LHCC-2003-058.
    • RD50 Status Report , vol.2002 , Issue.2003
  • 20
    • 0032626460 scopus 로고    scopus 로고
    • M. Glaser, et al., Nucl. Instr. and Meth. A 426 (1999) 72 (see also: http://irradiation.web.cern.ch/irradiation/irrad1.htm ).
    • (1999) Nucl. Instr. and Meth. A , vol.426 , pp. 72
    • Glaser, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.