An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

Semiconductor Science and Technology

Volumn 22, Issue 6, 2007, Pages 671-677

  He, Jin ^a   Liu, Feng ^a   Bian, Wei ^a   Feng, Jie ^a   Zhang, Jian ^a   Zhang, Xing ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; POISSON EQUATION; THREE DIMENSIONAL;

ANALYTIC SURFACE POTENTIAL; CURRENT-VOLTAGE MODEL; DEVICE SIMULATION; SUPERPOSITION PRINCIPLE;

MOSFET DEVICES;

EID: 34249717263     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/6/015     Document Type: Article

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