Electron traps in n-GaN grown on Si (111) substrates by MOVPE

Materials Research Society Symposium Proceedings

Volumn 1068, Issue , 2008, Pages 171-176

  Ito, Tsuneo ^a,b   Terada, Yutaka ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b DOWA Electronics Materials Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON TRAPS; ELECTRONS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON; SILICON ALLOYS; SILICON CARBIDE;

DEEP ELECTRON TRAPS; DISLOCATION LINES; ELECTRON CAPTURE; HIGH DISLOCATION DENSITY; LINEAR ARRAYS; METAL-ORGANIC VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES; SI(111) SUBSTRATE;

SUBSTRATES;

EID: 57649087234     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1068-c06-09     Document Type: Conference Paper

References (13)

1. E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguè, M. Leroux, and P. Gibart, Phys. Stat. Sol (a), 188, 531 (2001);
2. Appl. phys. Lett. 79, 3230 (2001)
3. A. Dadgar, J. Biasing, A. Diez, A. Alam, M. Heuken and A. Krost, Jpn. J. Appl. Phs. 39, L1183 (2000)
4. S.Lawrence Selvaraj, T. Ito, Y. Terada, and T. Egawa, Appl. Phys. Lett. 90, 173506 (2007).
5. T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster and H. Gobel, Philos. Mag. A 77, 1013 (1998).
6. D. Haase, M. Schmid, W. Kürner, A. Dornen, V. Härle, F. Scholz, M. Burkard and H. Schweizer, Appl. phys. Lett. 69, 2525 (1996).
7. L. Polenta, A. Castaldini, and A. Cavallini, Appl. phys. Lett. 102,063702 (2007).
8. C. D. Wang, L.S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. E. Botchkarev and H. Morkoç, Appl. phys. Lett. 72, 1211 (1998).
9. P. Hacke, H. Okushi, T. Kuroda, T. Detchprohm, K. Hiramatsu and N. Sawaki, J.Cryst. Growth 189/190, 541 (1998).
10. Z.-Q. Fang, D. C. Look, P. Visconti, D.-F. Wang, C.-Z. Lu, F. Yun and H. Morkoç, Appl. phys. Lett. 78,2178 (2001).
11. D. Emiroglu, J. H. Evans-Freeman, M. J. Kappers, C. McAleese and C. J. Humphreys, Physica B401-402, 311 (2007).
12. A. Y. Polyakov, N. B. Smirnov, A.V. Govorkov, Z.-Q. Fang, D. C. Look, S. S. Park and J. H. Han, J. Appl. Phs. 92, 5241 (2002).
13. Z.-Q. Fang, D. C. Look, D. H. Kim, and I. Adesida, Appl. phys. Lett. 87, 182115 (2005).