Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 311-314

  Otsuka, H ^a   Yamanaka, K ^a   Noto, H ^a   Tsuyama, Y ^a   Chaki, S ^a   Inoue, A ^a   Miyazaki, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

GaN HEMT; Harmonic manipulation; High efficiency; High power amplifier

Indexed keywords

DC GENERATORS; ELECTRIC NETWORK TOPOLOGY; GALLIUM NITRIDE; HARMONIC ANALYSIS; MICROWAVES; NETWORKS (CIRCUITS); POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

CIRCUIT TOPOLOGIES; DRAIN EFFICIENCIES; GAN HEMT; HARMONIC FREQUENCIES; HARMONIC MANIPULATION; HIGH EFFICIENCIES; HIGH EFFICIENCY; HIGH POWER AMPLIFIER; HIGH POWER AMPLIFIERS; OUTPUT POWERS;

GALLIUM ALLOYS;

EID: 57349153117     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633165     Document Type: Conference Paper

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