GaN HEMT 60W output power amplifier with over 50% efficiency at C-band 15% relative bandwidth using combined short and open circuited stubs

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1255-1258

  Iyomasa, Kazuhiro ^a   Yamanaka, Koji ^a   Mori, Kazutomi ^a   Noto, Hifumi ^a   Ohtsuka, Hiroshi ^a   Nakayama, Masatoshi ^a   Yoneda, Satoshi ^a   Kamo, Yoshitaka ^a   Isota, Yoji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Broadband amplifier; High efficiency; Power amplifiers

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC);

DRAIN EFFICIENCY; HIGH EFFICIENCY; OPEN CIRCUITED STUBS;

POWER AMPLIFIERS;

EID: 34748903511     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380396     Document Type: Conference Paper

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