14-W GaN-based microwave power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2000, Pages 963-965

  Wu, Y F ^a   Kapolnek, D ^a   Ibbetson, J ^a   Parikh, P ^a   Keller, B P ^a   Mishra, U K ^a  

^a Nitres   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; LINEAR GAIN; POWER ADDED EFFICIENCY; RETURN LOSS;

BANDWIDTH; FLIP CHIP DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROWAVE AMPLIFIERS; POWER INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; WAVEGUIDES;

POWER AMPLIFIERS;

EID: 0033693995     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller and U.K. Mishra, "High-Al content AlGaN/GaN HEMTs on SiC substrates with very-high performance", Late News, IEEE International Electron Device Meeting, Washington, D.C., Dec. 25-28,1999.
2. J.J. Xu, Y-F. Wu, S. Keller, S. Heikman, B.J. Thibeault, U.K. Mishra, R.A. York, "1-8-GHz GaN-based power amplifier using flip-chip bonding," IEEE Microwave and Guided Wave Letters, vol.9, No.7, p.277-9, July 1999.
3. Y-F. Wu, R.A. York, S. Keller, B.P. Keller, U.K. Mishra, "3-9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching," IEEE Microwave and Guided Wave Letters, vol.9, No.8, IEEE, p.314-16, Aug. 1999.