370 W output power GaN-FET amplifier for W-CDMA cellular base stations

Electronics Letters

Volumn 41, Issue 25, 2005, Pages 17-18

  Wakejima, A ^a   Matsunaga, K ^a   Okamoto, Y ^a   Ando, Y ^a   Nakayama, T ^a   Miyamoto, H ^a  

^a R&D Association for Future Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; CODE DIVISION MULTIPLE ACCESS; FIELD EFFECT TRANSISTORS; GAIN CONTROL; GALLIUM NITRIDE; GATES (TRANSISTOR);

DRAIN EFFICIENCY; LINEAR GAIN; POWER DENSITY; SIGNAL INPUT;

POWER AMPLIFIERS;

EID: 29144473299     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053407     Document Type: Article

References (10)

1. Mishra, U.K., Parikh, P., and Wu, Y.-F.: ' AlGaN-GaN HEMTs an overview of device operation and application ', Proc. IEEE, 2002, 90, (6), p. 1022-1031
2. Ando, Y., Okamoto, Y., Miyamoto, H., Hayama, N., Nakayama, T., Kasahara, K., and Kuzuhara, M.: ' 110-W AlGaN-GaN heterojunction FET on thinned sapphire substrate ', IEEE IEDM Tech. Dig., Washington DC, USA, December 2001, p. 381-384
3. Eastman, L.F.: ' Experimental power-frequency limits of AlGaN-GaN HEMT's ', IEEE MTT-S Int. Microw. Symp. Dig., 2002, p. 2273-2275
4. Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J., Saxler, A.W., and Milligan, J.W.: ' Application of SiC MESFETs and GaN HEMTs in power amplifier design ', IEEE MTT-S Int. Microw. Symp. Dig., 2002, p. 1819-1822
5. Okamoto, Y., Ando, Y., Hataya, K., Miyamoto, H., Nakayama, T., Inoue, M., and Kuzuhara, M.: ' Improved power performance for a recessed-gate AlGaN-GaN Heterojunction FET with a field-modulating plate ', IEEE Trans. Microw. Theory Tech., 2004, 39, p. 1474-1475
6. Kikkawa, T., Nagahara, M., Adachi, N., Yokokawa, S., Kato, S., Yokoyama, M., Kanamura, M., Yamaguchi, Y., Hara, N., and Joshi, K.: ' High-power and high effciency AlGaN/GaN HEMT operated at 50 V drain bias voltage ', IEEE RFIC Symp. Digest, Philadelphia, PA, USA, June 2003, p. 167-170
7. Nagy, W., Singhal, S., Bores, R., Johnson, J.W., Brwon, J.D., Therrien, R., Chaudhari, A., Hanson, A.W., Riddle, J., Booth, S., Rajagopal, P., Piner, E.L., Linthicum, K.J., and Miyamoto, H.: ' 150 W GaN-on-Si RF power transistor ', IEEE MTT-S Int. Microw. Symp. Dig., 2005, WE1E-1
8. Wakejima, A., Matsunaga, K., Okamoto, Y., Ando, Y., Nakayama, T., Kasahara, K., and Miyamoto, H.: ' 280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations ', Electron. Lett, 2005, 41, (18), p. 1004-1005
9. Ishikura, K., Takenaka, I., Takahashi, H., Hasegawa, K., Asano, K., and Kanamori, M.: ' A 28 V over 300 W GaAs heterojunction FET with dual field-modulating plates for W-CDMA base stations ', IEEE MTT-S Dig., 2005, WE3E-1
10. Ebihara, K., Inoue, K., Haematsu, H., Yamaki, F., Takahashi, H., and Fukuya, J.: ' An ultra broad 300 W GaAs power FET for W-CDMA base stations ', IEEE MTT-S Int. Microw. Symp. Dig., 2001, p. 649-652