100 W C-band single-chip GaN FET power amplifier

Electronics Letters

Volumn 42, Issue 5, 2006, Pages 283-285

  Okamoto, Y ^a   Wakejima, A ^a   Ando, Y ^a   Nakayama, T ^a   Matsunaga, K ^a   Miyamoto, H ^a  

^a R&D Association for Future Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; GATES (TRANSISTOR); SOLID STATE DEVICES;

GAN-FET AMPLIFIER; SOLID-STATE AMPLIFIERS;

GALLIUM NITRIDE;

EID: 33644750350     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20064067     Document Type: Article

References (13)

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3. Microwave Products TIM4460-60SL, Toshiba Corporation
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