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Applied Physics A: Materials Science and Processing

Volumn 94, Issue 2, 2009, Pages 253-256

Contact barriers in a single ZnO nanowire device

(7) Kim, Kanghyun a Kang, Haeyong a Kim, Hyeyoung a Lee, Jong Soo b Kim, Sangtae b Kang, Woun c Kim, Gyu Tae a

a Korea University (South Korea)

b University of California Davis (United States)

c Ewha Womans University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUBE DIODES; HEAT CONDUCTION; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; THERMIONIC EMISSION; ZINC ALLOYS; ZINC OXIDE;

CONDUCTION MECHANISMS; CONTACT BARRIERS; CONTACT POTENTIALS; CROSS OVERS; PROBE RESISTANCES; SINGLE ZNO NANOWIRES; TUNNELING MODELS; TUNNELING REGIMES;

ACTIVATION ENERGY;

EID: 57249086531 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4787-5 Document Type: Article

Times cited : (13)

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