Si-containing block copolymers for self-assembled nanolithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2489-2494

  Ross, C A ^a   Jung, Y S ^a   Chuang, V P ^a   Ilievski, F ^a   Yang, J K W ^b   Bita, I ^a   Thomas, E L ^a   Smith, Henry I ^b   Berggren, K K ^b   Vancso, G J ^c   Cheng, J Y ^d  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b USA   (United States)

^c UNIVERSITY OF TWENTE   (Netherlands)

^d IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATIONS.; DIMETHYLSILOXANE; ETCH RESISTANCES; HUGGINS INTERACTION PARAMETERS; LINE EDGE ROUGHNESSES; LONG RANGES; MICRO DOMAINS; NANOSCALE PERIODICITIES; PATTERN GENERATIONS; PATTERN TRANSFERS; TOPOGRAPHICAL FEATURES;

BLOCK COPOLYMERS; COPOLYMERIZATION; COPOLYMERS; OXIDE FILMS; PHOTORESISTS; POLYMER FILMS; SILICON; STYRENE;

POLYMERS;

EID: 57249086303     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2981079     Document Type: Article

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