Closed-form physics-based models for threshold voltage and subthreshold slope in FinFETs including 3D effects

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Kloes, A ^a   Weidemann, M ^a   Goebef, D ^a   Bosworth, B T ^b  

^a Giessen Friedberg University of Applied Science   (Germany)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949104227     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422451     Document Type: Conference Paper

References (6)

1. B. Yu. "FinFET scaling to lOnm gate length," IEDM Techn. Digest, 2002.
2. G. Pei et al. "FinFET design considerations based on 3-D simulation and analytical modeling," IEEE Trans. Electron Devices, Vol. 49, No. 8, Aug. 2002.
3. S. Kolberg, T. A. Fjeldly. "2D modeling of nanoscale double gate SOI MOSFETs using conformal mapping," Physica Scripta, Vol. T126, 2006.
4. A. Kloes, A. Kostka. "A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling," Solid-State Electronics, Vol. 39, No. 12, Dec. 1996.
5. A. Kloes, M. Weidemann. "Self-consistent 2D compact modeling of nanoscale bulk MOSFETs," Solid-State Electron., Vol. 51, No. 5, pp. 739-748, May 2007.
6. TCAD Sentaurus, Version X-2005.10, Manual, Synopsys, Inc.