Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays

Microelectronic Engineering

Volumn 86, Issue 1, 2009, Pages 37-40

  Jha, S ^a   Jelenković, Emil V ^b   Pejovic M M ^c   Ristic G S ^c   Pejovic M ^c   Tong, K Y ^b   Surya, C ^b   Bello, I ^a   Zhang, W J ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c UNIVERSITY OF NI   (Serbia)

Author keywords

AlGaN; Gamma irradiation; GaN; HEMT; Irradiation; Low frequency noise; Noise

Indexed keywords

ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GAMMA RAYS; IONIZING RADIATION; IRRADIATION; RADIATION; SEMICONDUCTING GALLIUM; THERMAL NOISE;

ALGAN; GAMMA IRRADIATION; GAN; HEMT; LOW-FREQUENCY NOISE; NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 57149084856     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.001     Document Type: Article

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