60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 48, Issue 3, 2004, Pages 471-475

  Aktas, O ^a   Kuliev, A ^a   Kumar, V ^a   Schwindt, R ^a   Toshkov, S ^b   Costescu, D ^b   Stubbins, J ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GAMMA RAYS; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

RADIATION-INDUCED TRAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0345329431     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.08.003     Document Type: Article

References (15)

1. Kumar V., Lu W., Schwindt R., Kuliev A., Simin G., Yang J., et al. AlGaN/GaN HEMTs on SiC with. f(T) of over 120-GHz IEEE Electron Dev. Lett. 23(8):2002;455-457.
2. Wu Y.F., Kapolnek D., Ibbetson J.P., Parikh P., Keller B.P., Mishra U.K. Very-high power density AlGaN/GaN HEMTs. IEEE Trans. Electron Dev. 48(3):2001;586-590.
3. Morkoc H., Di Carlo A., Cingolani R. GaN-based modulation doped FETs and UV detectors. Solid-State Electron. 46:2002;157-202.
4. Edmunds LD, Barnes CE, Scheick LZ. An Introduction to Space Radiation Effects on Microelectronics. JPL Publication 00-06, 2000.
5. Luo B., Johnson J.W., Schoenfeld D., Pearton S.J., Ren F. Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures. Solid-State Electron. 45(7):2001;1148-1152.
6. Meulenberg A., Hung H.-.L.A., Peterson K.E., Anderson W.T. Total dose and transient radiation effects on GaAs MMICs. IEEE Trans. Electron Dev. 35(12):1988;2125-2132.
7. Look D.7C., Reynolds D.C., Hemsky J.W., Sizelove J.R., Jones R.L., Molnar R.J. Defect donor and acceptor in GaN. Phys. Rev. Lett. 79(12):1997;2273-2276.
8. Wang C.W., Soong B.S., Chen J.Y., Chen C.L., Su Y.K. Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films. J. Appl. Phys. 88(11):2000;6355-6358.
9. Umana-Membreno G.A., Dell J.M., Hessler T.P., Nener B.D., Parish G., Faraone L., et al. Co-60 gamma-irradiation-induced defects in n-GaN. Appl. Phys. Lett. 80(23):2002;4354-4356.
10. Emtsev V.V., Davydov V.Y., Kozlovskii V.V., Lundin V.V., Poloskin D.S., Smirnov A.N., et al. Point defects in gamma-irradiated n-GaN. Semicond. Sci. Tech. 15(1):2000;73-78.
11. Luo B., Johnson J.W., Ren F., Allums K.K., Abernathy C.R., Pearton S.J., et al. DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 79(14):2001;2196-2198.
12. Luo B., Johnson J.W., Ren F., Allums K.K., Abernathy C.R., Pearton S.J., et al. Influence of Co-60 gamma-rays on dc performance of AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 80(4):2002;604-606.
13. Vitusevich S.A., Klein N., Belyaev A.E., Danylyuk S.V., Petrychuk M.V., Konakova R.V., et al. Effects of gamma-irradiation on AlGaN/GaN-based HEMTs. Phys. Status Solidi A. 195(1):2003;101-105.
14. Neugebauer J., Van de Valle C. Atomic Geometry and Electronic structure of native defects in GaN. Phys. Rev. B. 50(11):1994;8067-8070.
15. Boguslawski P., Brigg E.L., Bernholc J. Native defects in gallium nitride. Phys. Rev. B. 51(23):1995;17255-17258.