Low-frequency noise in AlGaN/GaN high electron mobility transistors irradiated by γ-ray quanta

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 78-81

  Vitusevich, S A ^a,b   Klein, N ^a   Petrychuk, M V ^b   Belyaev, A E ^a,b   Danylyuk, S V ^a,b   Konakova, R V ^b   Avksentyev, A Yu ^b   Danilchenko, B A ^b   Tilak, V ^c   Smart, J ^c   Vertiatchikh, A ^c   Eastman, L F ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRON MOBILITY; GALLIUM NITRIDE; GAMMA RAYS; III-V SEMICONDUCTORS; IRRADIATION; NITRIDES; SAPPHIRE; SPURIOUS SIGNAL NOISE; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE BIAS DEPENDENCE; LOW-FREQUENCY NOISE; NOISE MEASUREMENTS; NONLINEAR DEPENDENCE; RADIATION HARDNESS; RADIATION INDUCED DEFECTS; SATURATION CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84875094944     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390121     Document Type: Conference Paper

References (5)

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