Electron traps in undoped GaN layers subjected to gamma-irradiation and annealing

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 799-802

  Davydov, D V ^a   Emtsev, V V ^a   Lebedev, A A ^a   Lundin, W V ^a   Poloskin, D S ^a   Shmidt, N M ^a   Usikov, A S ^a   Zavarin, E E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON TRAPS; GAMMA RAYS; HALL EFFECT; POINT DEFECTS; RADIATION EFFECTS;

GAMMA IRRADIATION; RADIATION INDUCED DEFECTS;

GALLIUM NITRIDE;

EID: 0035122875     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.799     Document Type: Article

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