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Volumn 119, Issue 1-4, 2006, Pages 380-385

Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE; CARBON; GALLIUM;

EID: 33749656772     PISSN: 01448420     EISSN: None     Source Type: Journal    
DOI: 10.1093/rpd/nci546     Document Type: Article
Times cited : (5)

References (18)
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    • Radiation induced effects research in emerging photonic technologies: Vertical cavity surface emitting lasers, GaN light emitting diodes and micro electromechanical devices
    • Taylar, E. W. et al. Radiation induced effects research in emerging photonic technologies: Vertical cavity surface emitting lasers, GaN light emitting diodes and micro electromechanical devices. SPIE 3124, 9-21 (1997).
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    • High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
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    • Makimoto, T.1    Kumakura, K.2    Kobayashi, N.3
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    • Optical properties of III-nitride ternary compounds
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.