Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing

Applied Surface Science

Volumn 252, Issue 8, 2006, Pages 3023-3032

  Ristić, Goran S ^a   Pejović, Momčilo M ^a   Jakšić, Aleksandar B ^b  

^a UNIVERSITY OF NI   (Serbia)

^b National Microelectronics Research Centre   (Serbia)

Author keywords

Annealing; Fowler Nordheim injection; High electric field stress; Interface traps; MOS transistor; Oxide trapped charge

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC FIELD EFFECTS; IRRADIATION; SWITCHING; THERMAL EFFECTS;

FOWLER-NORDHEIM INJECTION; HIGH ELECTRIC FIELD STRESS; INTERFACE TRAPS; MOS TRANSISTORS; OXIDE TRAPPED CHARGE;

MOSFET DEVICES;

EID: 31144459484     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.05.005     Document Type: Article

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