Ion implantation damage model for B, BF2, As, P, and Si in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 595-601

  Son, Myung Sik ^a   Hwang, Ho Jung ^b  

^a Semyung University   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON COMPOUNDS; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; STATISTICAL METHODS;

BORON DIFLUORIDE; ELECTRONIC ENERGY LOSS MODEL;

ION IMPLANTATION;

EID: 0033683704     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591238     Document Type: Article

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