Effects of ion implantation damage on elevated source/drain formation for ultrathin body silicon on insulator metal oxide semiconductor field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2965-2969

  Oh, Hyuckjae ^a   Sakaguchi, Takeshi ^a   Fukushima, Takafumi ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Crystallinity; ESD; Ion implantation; Sacrificial sidewall; SEG; Silicon on insulator

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

CRYSTALLINITY; SACRIFICIAL SIDEWALL; SEG; SILICON ON INSULATOR;

MOSFET DEVICES;

EID: 33646926161     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2965     Document Type: Article

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