Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Capello, L ^a,b   Metzger, T H ^a   Werner, M ^c   Van Den Berg, J A ^c   Servidori, M ^d   Ottaviano, L ^e   Bongiorno, C ^e   Mannino, G ^e   Feudel, T ^f   Herden, M ^f   Holy V ^g  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CEA GRENOBLE   (France)

^c UNIVERSITY OF SALFORD   (United Kingdom)

^d CNR   (Italy)

^e CNR IMM   (Italy)

^f IBM MICROELECTRONICS   (United States)

^g CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ELECTRIC PROPERTIES; SEMICONDUCTOR JUNCTIONS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

ARSENIC IMPLANTS; PREAMORPHIZATION; PREAMORPHIZING IMPLANT (PAI);

MOS DEVICES;

EID: 33845224045     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363252     Document Type: Article

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