Fabrication and properties of silicon-based (Bi,Sm)4Ti3O12 thin film

Journal of Alloys and Compounds

Volumn 467, Issue 1-2, 2009, Pages 434-437

  Yang, C H ^a   Wang, S D ^a   Yang, D M ^b  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

Chemical synthesis; Ferroelectrics; Thin film

Indexed keywords

CAPACITANCE; CERAMIC CAPACITORS; DIELECTRIC PROPERTIES; ELASTICITY; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HYSTERESIS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPIN COATING; SYNTHESIS (CHEMICAL); THICK FILMS; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ATOMIC FORCE MICROSCOPES; CAPACITANCE VOLTAGES; CHEMICAL SOLUTION DEPOSITIONS; CHEMICAL SYNTHESIS; COUNTERCLOCKWISE HYSTERESISES; DIELECTRIC CONSTANTS; DISSIPATION FACTORS; ELECTRICAL MEASUREMENTS; FERROELECTRIC HYSTERESISES; FERROELECTRIC LAYERS; FERROELECTRICS; FUNCTION OF FREQUENCIES; INSULATING PROPERTIES; MFS STRUCTURES; SEMI-CONDUCTORS; SPIN COATING TECHNIQUES; VOLTAGE CHARACTERISTICS; X-RAY DIFFRACTIONS;

FERROELECTRIC MATERIALS;

EID: 56949095192     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.12.059     Document Type: Article

References (20)

1. Subbarao E.C. Phys. Rev. 122 (1961) 804
2. Kojima T., Watanabe T., Funakubo H., Saito K., Osada M., and Kakihana M. J. Appl. Phys. 93 (2003) 1707
3. Noguchi Y., and Miyayama M. Appl. Phys. Lett. 78 (2001) 1903
4. Kim S.S., Song J.S., and Kwon S.C. J. Cryst. Growth 271 (2004) 90
5. Yoshimura T., Fujimura N., Ito D., and Ito T. J. Appl. Phys. 87 (2000) 3444
6. Sun C.L., Chen S.Y., Chen S.B., and Chin A. Appl. Phys. Lett. 80 (2002) 1984
7. Bae J.C., Kim S.S., Kim W.J., Choi E.K., and Song T.K. Thin Solid Films 468 (2004) 23
8. Yang C.H., Wang Z., Xu H.Y., Sun X.Q., and Han J.R. Mater. Chem. Phys. 88 (2004) 67
9. Hou Y., Xu X.H., Wang H., Wang M., and Shang S.X. Appl. Phys. Lett. 78 (2001) 1733
10. Chopra S., Sharma S., Goel T.C., and Mendiratta R.G. Appl. Surf. Sci. 230 (2004) 207
11. Liu W.L., Xia H.R., Han H., and Wang X.O. J. Cryst. Growth. 264 (2004) 351
12. Joshi P.C., and Desu S.B. J. Appl. Phys. 80 (1996) 2349
13. Chopra S., Sharma S., Goel T.C., and Mendiratta R.G. Appl. Surf. Sci. 236 (2004) 321
14. Han J.P., and Ma T.P. Appl. Phys. Lett. 72 (1998) 1185
15. Noda M., Matsumuro Y., Sugiyama H., and Okuyama M. Jpn. J. Appl. Phys. 38 (1999) 2275
16. Maffei N., and Krupanidhi S.B. J. Appl. Phys. 72 (1992) 3617
17. Park B.E., Takahashi K., and Ishiwara H. Appl. Phys. Lett. 85 (2004) 4448
18. Bae J.C., Kim S.S., Park M.H., Jang K.W., Lee Y.I., and Song J.S. J. Cryst. Growth 268 (2004) 204
19. Wang S.W., Wang H., Wu X.M., Shang S.X., Wang M., Li Z.F., and Lu W. J. Cryst. Growth. 224 (2001) 323
20. Chopra S., Sharma S., Goel T.C., and Mendiratta R.G. Solid State Commun. 127 (2003) 299