Electrical properties of samarium-substituted Bi4Ti 3O12 thin films grown on p-type Si substrates

Journal of Crystal Growth

Volumn 268, Issue 1-2, 2004, Pages 204-209

  Bae, Ji Cheul ^a   Kim, Sang Su ^a   Park, Moon Heum ^a   Jang, Ki Wan ^a   Lee, Yong Ill ^a   Song, Jae Sung ^b  

^a Changwon National University   (South Korea)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

A1. Samarium doping; A3. Sol gel deposition; B1. Bismuth titanate; B2. Ferroelectric materials; B3. Field effect transistor

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; BORON; CRYSTALLIZATION; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HYSTERESIS; PEROVSKITE; SAMARIUM; SILICA; SOL-GELS; THERMAL EFFECTS;

INTER-DIFFUSION; METAL-FERROELECTRICS-METAL (MFM); SAMARIUM-DOPING; SOL-GEL DEPOSITION; THERMALLY STIMULATED CURRENT (TSC);

THIN FILMS;

EID: 2942700370     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.017     Document Type: Article

References (14)

1. Lee J.S., Kim H.H., Kwon H.J., Jeong Y.W. Appl. Phys. Lett. 73:1998;166.
2. Aizawa K., Tokumitsu E., Okamoto K., Ishiwara H. Appl. Phys. Lett. 76:2000;2609.
3. Joshi P.C., Desu S.B. J. Appl. Phys. 80:1996;2349.
4. Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., Jo W. Nature(London). 401:1999;682.
5. Chon U., Kim K.-B., Jang H.M., Yi G.-C. Appl. Phys. Lett. 79:2001;3137.
6. Kojima T., Sakai T., Watanabe T., Funakubo H., Saito K., Osada M. Appl. Phys. Lett. 80:2002;2746.
7. Hou Y., Xu X.-H., Wang H., Wang M., Shang S.-X. Appl. Phys. Lett. 78:2001;1733.
8. Yoshimura T., Fujimura N., Ito D., Ito T. J. Appl. Phys. 87:2000;3444.
9. Fu L., Liu K., Zhang B., Chu J., Wang H., Wang M. Appl. Phys. Lett. 72:1998;1784.
10. Taylor P.D., Morgan D.V. J. Phys. D: Appl. Phys. 10:1977;73.
11. Dietz G.W., Schumacher M., Waser R., Streiffer S.K., Basceri C., Kingon A.I. J. Appl. Phys. 82:1997;2359.
12. Shin J.C., Hong E.K., Hwang C.S., Kim H.J. J. Korean Phys. Soc. 35:1999;S119.
13. Scott J.F., Melnick B.M., Cuchiaro J.D., Zuleeg R., Paz de Araujo C.A., McMillan L.D., Scott M.C. Integr. Ferroelectr. 4:1994;85.
14. Watanabe K., Hartman A.J., Lamb R.N., Scott J.F. J. Appl. Phys. 84:1998;2170.