Ferroelectric lanthanum-substituted Bi4Ti3O 12 thin films fabricated on p-type Si(100) substrates by a sol-gel method

Thin Solid Films

Volumn 468, Issue 1-2, 2004, Pages 23-27

  Bae, Ji Cheul ^a   Kim, Sang Su ^a   Kim, Won Jeong ^a   Choi, Eun Kyung ^a   Song, Tae Kwon ^a  

^a Changwon National University   (South Korea)

Author keywords

Capacitor; Ferroelectric properties; Metal oxide semiconductor structure; Surface and interface states

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FREQUENCIES; LANTHANUM COMPOUNDS; MOS DEVICES; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SOL-GELS; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC PROPERTIES; MEMORY WINDOWS; SPIN-COATING METHOD; SURFACE AND INTERFACE STATES;

THIN FILMS;

EID: 4644302171     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.03.038     Document Type: Article

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