Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5469-5472

  Yang, Tao ^a   Nishioka, Masao ^b   Arakawa, Yasuhiko ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B2. GaAs; B2. InAs; B3. Laser diodes

Indexed keywords

ANNEALING; GALLIUM; GALLIUM ALLOYS; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; VAPORS;

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; A3. QUANTUM DOTS; B2. GAAS; B2. INAS; B3. LASER DIODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 56949094801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.173     Document Type: Article

References (16)

1. Huffaker D.L., Park G., Zhou Z., Shchekin O.B., and Deppe D.G. Appl. Phys. Lett. 73 (1998) 2564
2. Mukai Y., Nakata K., Otsubo M., Sugawara N., Yokoyama A., and Ishikawa H. IEEE Photonics Technol. Lett. 11 (1999) 1205
3. Zhukov E., Kovsh A.R., Maleev N.A., Mikhrin S.S., Ustinov V.M., Tsatsul'nikov A.F., Maxinov M.V., Volovik B.V., Bedarev D.A., Shernyakov Y.M., Kop'ev P.S., Alferov Z.I., Ledentsov N.N., and Bimberg D. Appl. Phys. Lett. 75 (1999) 1926
4. Eliseev P.G., Li H., Stinz A., Liu G.T., Newell T.C., Malloy K.J., and Lester L.F. Appl. Phys. Lett. 77 (2000) 262
5. Otsubo N., Hatori M., Ishida S., Okumura T., Akiyama Y., Nakata H., Ebe M., Sugawara A., and Arakawa Y. Jpn. J. Appl. Phys. Part 2 43 (2004) L1124
6. Liu H.Y., Sellers I.R., Badcock T.J., Mowbray D.J., Skolnick M.S., Groom K.M., Gutiérrez M., Hopkinson M., Ng J.S., David J.P.R., and Beanland R. Appl. Phys. Lett. 85 (2004) 704
7. Passaseo A., De Vittorio M., Todaro M.T., Tarantini I., De Giorgi M., Cingolani R., Taurino A., Catalano M., Fiore A., Markus A., Chen J.X., Paranthoen C., Oesterle U., and Ilegems M. Appl. Phys. Lett. 82 (2003) 3632
8. Kim S.M., Wang Y., Keever M., and Harris J.S. IEEE Photonics Technol. Lett. 16 (2004) 377
9. Kainander N., Sellin R.L., Kettler T., Ledentsov N.N., Bimberg D., Zakharov N.D., and Werner P. Appl. Phys. Lett. 84 (2004) 2992
10. Tatebayashi J., Arakawa Y., Hatori N., Ebe H., Sugawara M., Sudo H., and Kuramata A. Appl. Phys. Lett. 85 (2004) 1024
11. Nuntawong N., Xin Y.C., Birudavolu S., Wong P.S., Huang S., Hains C.P., and Huffaker D.L. Appl. Phys. Lett. 86 (2005) 193115
12. Yang T., Tatebayashi J., Nishioka M., and Arakawa Y. Appl. Phys. Lett. 89 (2006) 81902
13. Tatebayashi J., Hatori N., Ishida M., Ebe H., Sugawara M., Arakawa Y., Sudo H., and Kuramata A. Appl. Phys. Lett. 86 (2005) 53107
14. Sanguinetti S., Henini M., Alessi M.G., Capizzi M., Frigeri P., and Franchi S. Phys. Rev. B 60 (1999) 8276
15. Liu H.Y., Badcock T.J., Sellers I.R., Soong W.M., Groom K.M., Hopkinson M., Mowbray D.J., and Skolnick M.S. Physica E 26 (2005) 129
16. Leon R., Fafard S., Piva P.G., Ruvimov S., and Weber Z.L. Phys. Rev. B 58 (1998) R4262