InAs/GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition - Effects of postgrowth annealing on stacked InAs quantum dots

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 1024-1026

  Tatebayashi, Jun ^a   Arakawa, Yasuhiko ^a   Hatori, Nobuaki ^b   Ebe, Hiroji ^b   Sugawara, Mitsuru ^b   Sudo, Hisao ^c   Kuramata, Akito ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CLADDING (COATING); CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE CONTROL; THICKNESS CONTROL;

POSTGROWTH ANNEALING; QUANTUM-DOT LASERS; SPACER THICKNESS; UPPER CLADDING LAYER (UCL);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4344709065     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1781741     Document Type: Article

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