A new memory concept: The nano-multiple-tunnel-junction memory with embedded Si nano-crystals

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 399-404

  Deleruyelle, D ^a   Le Royer, C ^a   DeSalvo, B ^a   Le Carval, G ^a   Gely, M ^a   Baron, T ^b   Autran, J L ^c   Deleonibus, S ^a  

^a CEA LETI   (France)

^b CNRS   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Electron beam lithography; Memories; Quantum dots; Silicon on insulator technology; Tunnel effect

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; DATA STORAGE EQUIPMENT; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

MULTIPLE-TUNNEL-JUNCTION (MTJ) MEMORY; QUANTUM CONFINEMENT;

NANOSTRUCTURED MATERIALS;

EID: 1642634143     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.027     Document Type: Conference Paper

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