Influences of annealing temperature on the optical properties of SiO x thin film prepared by reactive magnetron sputtering

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 2006-2011

  Huang, Feng ^a   Song, Qiuming ^a   Li, Ming ^a   Xie, Bin ^a   Wang, Haiqian ^a   Jiang, Yousong ^b   Song, Yizhou ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Shincron Co Ltd   (Japan)

Author keywords

Heat treatment; Optical properties; Phase transitions; Silicon oxide; Sputtering

Indexed keywords

ANNEALING; FILM PREPARATION; FILM THICKNESS; HEAT TREATMENT; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PHASE SEPARATION; PHASE TRANSITIONS; REFRACTIVE INDEX; SILICON COMPOUNDS; SILICON OXIDES; SPUTTERING; STRESS RELAXATION; THIN FILMS;

ANNEALED FILMS; ANNEALING TEMPERATURES; COMPOSITIONAL PROPERTIES; OXIDATION MECHANISMS; OXYGEN CONTENT; REACTIVE MAGNETRON SPUTTERING; REFRACTIVE INDEX INCREASE; TEMPERATURE RANGE;

ATMOSPHERIC TEMPERATURE;

EID: 56949084473     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.141     Document Type: Article

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