Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 564-567

  Bi, L ^a   He, Y ^a   Feng, J Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Interfaces; A1. Low dimensional structures A3. Physical vapor deposition process; B1. Nanomaterials; B2. Semiconducting materials

Indexed keywords

MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; OXYGEN; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACES; LOW-DIMENSIONAL STRUCTURES;

ANNEALING;

EID: 33644862337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.014     Document Type: Article

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