Raman inspection for the annealing induced evolution of sp2 and sp3 bonding behavior in sandwiched Si/C/Si multilayer

Thin Solid Films

Volumn 517, Issue 3, 2008, Pages 1101-1105

  Chung, C K ^a   Lai, C W ^a   Peng, C C ^a   Wu, B H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Carbon; Ion beam sputtering; Multilayer; Raman; SiC

Indexed keywords

BEAM PLASMA INTERACTIONS; CARBON; CARBON FILMS; GRAPHITE; ION BEAMS; ION BOMBARDMENT; MULTILAYERS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON CARBIDE; SPUTTERING;

AES DEPTH PROFILES; ANNEALING TEMPERATURES; ANNEALING TIMES; BONDING BEHAVIORS; CARBON LAYERS; HIGH VACUUMS; INTEGRATED INTENSITIES; INTER DIFFUSIONS; ION BEAM SPUTTERING; RAMAN; ROOM TEMPERATURES; SI (100) SUBSTRATES; SI(100); SIC; SIC FORMATIONS;

ANNEALING;

EID: 56649105248     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.028     Document Type: Article

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