Effect of amorphous Si layer on the reaction of carbon and silicon in the C/Si multilayer by high vacuum annealing

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 1985-1991

  Chung, C K ^a   Wu, B H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon; Carbon; Diffusion; Grain boundary; Silicon carbide

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; GRAIN BOUNDARIES; MULTILAYERS; REACTION KINETICS; SILICON CARBIDE; ULTRAHIGH VACUUM;

FORMATION TEMPERATURE; INTERDIFFUSION; VACUUM ANNEALING;

AMORPHOUS SILICON;

EID: 33750921629     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.08.012     Document Type: Article

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