Growth kinetics of hydrogenated amorphous silicon carbide films by RF plasma-enhanced CVD using two kinds of source materials

Thin Solid Films

Volumn 409, Issue 1, 2002, Pages 74-77

  Kaneko, T ^a   Miyakawa, N ^a   Sone, H ^b   Yamazaki, H ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Amorphous silicon carbide; Kinetics; Plasma chemical vapor deposition (CVD); Silicon carbide

Indexed keywords

CRYSTAL GROWTH; DIFFUSION; ELECTRODES; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SUBSTRATES;

SILICON CARBIDE FILMS;

THIN FILMS;

EID: 0037156060     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00106-2     Document Type: Conference Paper

References (16)

1. Proceedings of the 6th international conference on silicon carbide and related materials