Highly reliable ring-type contact for high-density phase change memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3233-3237

  Jeong, Chang Wook ^a   Ahn, Su Jin ^a   Hwang, Young Nam ^a   Song, Yoon Jong ^a   Jae Hee, O H ^a   Lee, Su Youn ^a   Lee, Se Ho ^a   Ryoo, Kyung Chang ^a   Park, Jong Hyun ^a   Park, Jae Hyun ^a   Shin, Jae Min ^a   Yeung, Fai ^a   Jeong, Won Cheol ^a   Kim, Jeong In ^a   Koh, Gwan Hyeob ^a   Jeong, Gi Tae ^a   Jeong, Hong Sik ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

256Mb PRAM; Low reset current; Reliability; Ring shape contact

Indexed keywords

DEPOSITION; ELECTRIC RESISTANCE; ELECTRODES; RELIABILITY; THIN FILMS; TITANIUM NITRIDE;

256MB PRAM; LOW RESET CURRENT; RING-SHAPE CONTACT; TIN-DEPOSITED CONTACT HOLE;

RANDOM ACCESS STORAGE;

EID: 33646931779     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3233     Document Type: Article

References (4)

1. Y. N. Hwang et al.: IEDM Tech. Dig., 2003, p. 893.
2. C. W. Jeong et al.: Proc. NVSMW., 2004, p. 28.
3. S. H. Lee et al.: Proc. VLSI Technology, 2004, p. 20.
4. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens and R. Bez.: TEDM Tech. Dig., 2003, p. 699.