The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8810-8812

  Choi, Kyu Jeong ^a   Yoon, Sung Min ^a   Lee, Nam Yeal ^a   Lee, Seung Yun ^a   Park, Young Sam ^a   Yu, Byoung Gon ^a   Ryu, Sang Ouk ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Dankook University   (South Korea)

Author keywords

excess Sb Ge2Sb2 + xTe5; Ge2Sb2Te5; Phase change memory; Phase transition

Indexed keywords

EID: 50849095764     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.02.014     Document Type: Letter

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