Concentration of intrinsic defects and self-diffusion in GaSb

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Chroneos, A ^a   Bracht, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CONCENTRATION (PROCESS); DIFFUSION; ELECTRONIC STRUCTURE; POINT DEFECTS; SEMICONDUCTOR DOPING;

EXPERIMENTAL EVIDENCES; GALLIUM ANTIMONIDE; INTRINSIC DEFECTS; STRUCTURE CALCULATIONS; THREE ORDERS OF MAGNITUDES;

GALLIUM;

EID: 56349147017     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3010300     Document Type: Article

References (40)

1. P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 0021-8979 10.1063/1.365356 81, 5821 (1997).
2. H. Bracht and S. Brotzmann, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71. 115216 71, 115216 (2005).
3. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett. 0003-6951 10.1063/1.1618382 83, 3275 (2003).
4. G. Wilk, R. M. Wallace, and J. M. Antony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
5. K. Y. Tse and J. Robertson, J. Appl. Phys. 0021-8979 10.1063/1.2369645 100, 093713 (2006).
6. H. Bracht, S. P. Nicols, W. Walukiewicz, J. P. Silveira, F. Briones, and E. E. Haller, Nature (London) 0028-0836 10.1038/35040526 408, 69 (2000).
7. H. Bracht, S. P. Nicols, E. E. Haller, J. P. Silveira, and F. Briones, J. Appl. Phys. 0021-8979 10.1063/1.1363683 89, 5393 (2001).
8. U. Gösele, Nature (London) 0028-0836 10.1038/35040672 408, 38 (2000).
9. M. Hakala, M. J. Puska, and R. M. Nieminen, J. Appl. Phys. 0021-8979 10.1063/1.1462844 91, 4988 (2002).
10. M. A. Malouin, F. El-Mellouhi, and N. Mousseau, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.045211 76, 045211 (2007).
11. K. Sunder, H. Bracht, S. P. Nicols, and E. E. Haller, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.245210 75, 245210 (2007).
12. D. Shaw, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/18/7/305 18, 627 (2003).
13. D. Weiler and H. Mehrer, Philos. Mag. A 0141-8610 10.1080/ 01418618408234931 49, 309 (1984).
14. K. Sunder and H. Bracht, Physica B (Amsterdam) 401-402, 262 (2007). 0921-4526
15. J. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.3865 77, 3865 (1996).
16. D. Vanderbilt, Phys. Rev. B 0163-1829 10.1103/PhysRevB.41.7892 41, 7892 (1990).
17. M. C. Payne, M. P. Teter, D. C. Allan, T. A. Arias, and J. D. Joannopoulos, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.64.1045 64, 1045 (1992).
18. M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, and M. C. Payne, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/14/11/301 14, 2717 (2002).
19. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976).
20. M. Haran, J. A. Catherwood, and P. Clancy, Appl. Phys. Lett. 0003-6951 10.1063/1.2198096 88, 173502 (2006).
21. A. Chroneos, R. W. Grimes, B. P. Uberuaga, S. Brotzmann, and H. Bracht, Appl. Phys. Lett. 0003-6951 10.1063/1.2805773 91, 192106 (2007).
22. A. Chroneos, B. P. Uberuaga, and R. W. Grimes, J. Appl. Phys. 0021-8979 10.1063/1.2798875 102, 083707 (2007).
23. N. Govind, M. Petersen, G. Fitzgerald, D. King-Smith, and J. Andzelm, Comput. Mater. Sci. 0927-0256 10.1016/S0927-0256(03)00111-3 28, 250 (2003).
24. T. A. Halgren and W. N. Lipscomb, Chem. Phys. Lett. 0009-2614 10.1016/0009-2614(77)80574-5 49, 225 (1977).
25. J. Zhang, Y. Ashizawa, and H. Oka, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/18/20/012 18, 4879 (2006).
26. A. Chroneos, H. Bracht, R. W. Grimes, and B. P. Uberuaga, Appl. Phys. Lett. 0003-6951 10.1063/1.2918842 92, 172103 (2008).
27. S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. Simoen, E. E. Haller, J. S. Christensen, and P. Werner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.235207 77, 235207 (2008).
28. A. Chroneos, R. W. Grimes, B. P. Uberuaga, and H. Bracht, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.235208 77, 235208 (2008).
29. H. Bracht and A. Chroneos, J. Appl. Phys. 104, 076108 (2008).
30. S. B. Zhang and J. E. Northrup, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.67.2339 67, 2339 (1991).
31. Handbook of Chemistry and Physics, edited by, D. R. Lide, 76th ed. (CRC, Boca Raton, 1995), pp. 5-4.
32. M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semiconductor Parameters (World Scientific, Singapore, 1996), Vol. 1.
33. D. Åberg, P. Erhart, A. J. Williamson, and V. Lordi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.165206 77, 165206 (2008).
34. J. A. Van Vechten, J. Phys. C 0022-3719 10.1088/0022-3719/17/35/001 17, L933 (1984).
35. F. El-Mellouhi and N. Mousseau, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.205207 74, 205207 (2006).
36. M. Bockstedte and M. Scheffler, Z. Phys. Chem. (Leipzig) 200, 195 (1997). 0323-4479
37. F. El-Mellouhi and N. Mousseau, Physica B (Amsterdam) 401-402, 658 (2007). 0921-4526
38. X. Y. Liu, W. Windl, K. M. Beardmore, and M. P. Masquelier, Appl. Phys. Lett. 0003-6951 10.1063/1.1562342 82, 1839 (2003).
39. A. Chroneos, R. W. Grimes, and C. Tsamis, J. Mater. Sci.: Mater. Electron. 0957-4522 10.1007/s10854-006-9073-8 18, 763 (2007).
40. E. R. Batista, J. Heyd, R. G. Hennig, B. P. Uberuaga, R. L. Martin, G. E. Scuseria, C. J. Umrigar, and J. W. Wilkins, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.121102 74, 121102 (2006).