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Volumn 401-402, Issue , 2007, Pages 658-661

Ab-initio simulations of self-diffusion mechanisms in semiconductors

Author keywords

Group III V (except nitrides); Group IV and compounds; Modeling; Theoretical methods

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; GALLIUM COMPOUNDS; RELAXATION PROCESSES; SILICON COMPOUNDS; THERMAL EFFECTS;

EID: 36048977270     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.045     Document Type: Article
Times cited : (4)

References (31)
  • 21
    • 36048947910 scopus 로고
    • Pantelides S.T. (Ed), Gordon and Breach, New York (Chapter 3)
    • Watkins G.D. Deep centers in semiconductors. In: Pantelides S.T. (Ed) (1992), Gordon and Breach, New York (Chapter 3)
    • (1992) Deep centers in semiconductors
    • Watkins, G.D.1
  • 29
    • 34447538520 scopus 로고    scopus 로고
    • M.-A. Malouin, F. El-Mellouhi, N. Mousseau, Phys. Rev. B, 76 (2007) 045211.
  • 30
    • 36048945622 scopus 로고    scopus 로고
    • K. Levasseur Smith, N. Mousseau, 2007, submitted to PRB, 2007.
  • 31
    • 36049018265 scopus 로고    scopus 로고
    • The ART interface to SIESTA can be downloaded freely from 〈http://www.phys.umontreal.ca/∼mousseau〉.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.