Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Jeganathan, K ^a   Shimizu, M ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ETCHING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; REDUCTION;

DISLOCATION DENSITY; EPILAYERS; NANOISLANDS; THERMAL CONDUCTANCE;

GALLIUM NITRIDE;

EID: 20944443622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1926419     Document Type: Article

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