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Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1417-1420

Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

(5) Bourret Courchesne, E D a Yu, K M a Benamara, M a Liliental Weber, Z a Washburn, J a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

Dislocation; GaN; Interlayer; OMVPE; TEM

Indexed keywords

COALESCENCE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

INTERMEDIATE TEMPERATURE INTERLAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035517101 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0194-9 Document Type: Article

Times cited : (16)

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