Electrical properties of delta-doped silicon-nanowire field-effect transistors

Journal of the Korean Physical Society

Volumn 53, Issue 4, 2008, Pages

  Park, Won Il ^a  

^a Hanyang University   (South Korea)

Author keywords

Delta doping; Field effect transistors; Silicon nanowires

Indexed keywords

EID: 55949109961     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.1759     Document Type: Article

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