MOCVD-grown AlGaN/GaN heterostructures with high electron mobility

Semiconductors

Volumn 38, Issue 11, 2004, Pages 1323-1325

  Lundin, V V ^a   Zavarin, E E ^a   Besulkin, A I ^a   Gladyshev, A G ^a   Sakharov, A V ^a   Kokorev, M F ^b   Shmidt, N M ^a   Tsatsul'nikov, A F ^a   Ledentsov, N N ^a   Alferov, Zh I ^a   Kakanakov, R ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^c Central Laboratory of Applied Physics Bulgarian Academy of Sciences   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 10044277083     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1823068     Document Type: Article

References (11)

1. M. Marso, P. Javorka, A. Alam, et al., Phys. Status Solidi A 188, 199 (2001).
2. N. Zhang, B. Moran, S. P. DenBaars, et al., Phys. Status Solidi A 188, 213 (2001).
3. G. Simin, A. Tarakji, X. Hu, et al., Phys. Status Solidi A 188, 219 (2001).
4. N. Maeda, T. Saitoh, K. Tusubaki, and N. Kobayashi, Phys. Status Solidi A 188, 223 (2001).
5. Y. Liu, J. A. Bardwell, S. P. McAlister, et al., Phys. Status Solidi A 188, 233 (2001).
6. B. Shen, T. Someya, and Y. Arakawa, Appl. Phys. Lett. 76, 2746 (2000).
7. www.compoundsemiconductor.net/articles/news/7/12/12/1.
8. W. V. Lundin, A. V. Sakharov, A. F. Tsatsul'nikov, et al., Phys. Status Solidi A 188, 885 (2001).
9. M. F. Kokorev and N. A. Maleev, Semicond. Sci. Technol. 15, 301 (2000).
10. M. F. Kokorev, N. A. Maleev, D. V. Pakhnin, et al., in Proceedings of 9th International Symposium on Nanostructures: Physics and Technology, Ed. by Zh. Alferov and L. Esaki (St. Petersburg, Russia, 2001), p. 230.
11. A. S. Usikov, W. V. Lundin, B. V. Pushnyi, et al., in Proceedings of 7th International Conference on Silicon Carbide, III Nitrides and Related Materials, 1997 (Stockholm, 1997), Part 2, p. 1393.