Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Ohmori, K ^a   Ahmet, P ^a,g   Yoshitake, M ^a   Chikyow, T ^a   Shiraishi, K ^b,h   Yamabe, K ^b   Watanabe, H ^c   Akasaka, Y ^d,i   Nara, Y ^d   Chang, K S ^e   Green, M L ^e   Yamada, K ^f  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^f WASEDA UNIVERSITY   (Japan)

^g TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^h JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

ⁱ TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; GATE DIELECTRICS; MOS DEVICES; OXYGEN VACANCIES; PERMITTIVITY; PLATINUM ALLOYS; WORK FUNCTION;

FLATBAND VOLTAGE; FORMING GAS ANNEALING; METAL ELECTRODES; OXYGEN VACANCY FORMATION;

HAFNIUM COMPOUNDS;

EID: 34247885978     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721384     Document Type: Article

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