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Journal of the Electrochemical Society

Volumn 153, Issue 2, 2006, Pages

Time-resolved photoluminescence analysis of multidose Si-ion-implanted Si O2

(4) Lin, Chun Jung a Lee, Chao Kuei b Diau, Eric Wei Guang a Lin, Gong Ru a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; DISSOCIATION; ELECTRIC POTENTIAL; OXYGEN; PHOTOLUMINESCENCE;

CAPACITANCE-VOLTAGE ANALYSIS; LONG-TERM ANNEALING; NANOCRYSTALLITE SI; OXYGEN BONDING DEFECTS;

ION IMPLANTATION;

EID: 30644480598 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2150127 Document Type: Article

Times cited : (19)

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