Electroluminescence mechanism in SiO x layers containing radiative centers

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4078-4081

  Bae, H S ^a   Kim, T G ^a   Whang, C N ^a   Im, S ^a   Yun, J S ^b   Song, J H ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CURRENT-VOLTAGE MEASUREMENTS; ELECTROLUMINESCENCE SPECTRUM; GROUND-STATE ELECTRONS; NEAR INFRARED LUMINESCENCE; PEAK POSITION; RADIATIVE CENTER; REVERSE BIAS; RF MAGNETRONS; SILICON RICH SILICON OXIDES; THERMAL OXIDATION;

GERMANIUM; IMPACT IONIZATION; ION IMPLANTATION; LIGHT; LUMINESCENCE; SILICON OXIDES;

ELECTROLUMINESCENCE;

EID: 0036536664     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452768     Document Type: Article

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