Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers

Journal of Applied Physics

Volumn 85, Issue 1, 1999, Pages 168-173

  Valakh, M Ya ^a   Yukhimchuk, V A ^a   Bratus', V Ya ^a   Konchits, A A ^a   Hemment, P L F ^b   Komoda, T ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; ION IMPLANTATION; LIGHT EMISSION; LOW TEMPERATURE OPERATIONS; NANOSTRUCTURED MATERIALS; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; RAMAN SCATTERING; SILICON; SPECTROMETERS;

LOW TEMPERATURE RF PLASMA TREATMENT; NANOCRYSTALLITES; SILICON IMPLANTED SILICA;

SILICA;

EID: 0032620764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369464     Document Type: Article

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