Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 91-102

  Colombeau, B ^a   Smith, A J ^a   Cowern, N E B ^a   Pawlak, B J ^b   Cristiano, F ^c   Duffy, R ^b   Claverie, A ^c,d   Ortiz, C J ^e   Pichler, P ^e   Lampin, E ^f   Zechner, C ^g  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c LAAS CNRS   (France)

^d CEMES CNRS   (France)

^e FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^f Institut Superieur de l'Electronique et du Numerique   (France)

^g SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; POINT DEFECTS; SILICON;

DOPANTS; END OF RANGE (EOR) DEFECTS; ULTRA SHALLOW JUNCTIONS (USJ); VACCANCY;

BORON;

EID: 5544322057     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c3.6     Document Type: Conference Paper

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