Study of BF2 ion implantation into crystalline silicon: Influence of fluorine on boron diffusion

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 351-356

  Ihaddadene Lecoq, Lilya ^a   Marcon, Jerome ^a   Ketata, Kaouther ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; POSITIVE IONS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUPERSATURATION;

IMPLANTATION ENERGY; SILICON SUPERSATURATION; TRANSIENT ENHANCED DIFFUSION (TED);

BORON COMPOUNDS;

EID: 5544270645     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c8.9     Document Type: Conference Paper

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