High-concentration diffusion profiles of low-energy ion-implanted B, As and BF2 in bulk silicon

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1747-1751

  Suzuki, Kunihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

As; B; BF2; Diffusion; Ion implantation

Indexed keywords

BORON COMPOUNDS; IMPURITIES; ION IMPLANTATION; SEMICONDUCTING SILICON; THERMAL EFFECTS;

SURFACE CONCENTRATION;

DIFFUSION;

EID: 0035477993     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00210-6     Document Type: Article

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