Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 303-307

  Ihaddadene Le Coq, L ^a   Marcon, J ^a   Dush Nicolini, A ^a   Masmoudi, K ^a   Ketata, K ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

Boride enhanced diffusion; Boron; Simulation; Transient enhanced diffusion

Indexed keywords

ANNEALING; BORON; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; ION IMPLANTATION; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SOLUBILITY;

BORIDE ENHANCED DIFFUSION; TRANSIENT ENHANCED DIFFUSION;

SILICON;

EID: 1042277327     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.051     Document Type: Conference Paper

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